Tight-Binding Parameterization for Photonic Band Gap Materials

dc.contributor.author	Lidorikis, E.	en
dc.contributor.author	Sigalas, M. M.	en
dc.contributor.author	Economou, E.	en
dc.contributor.author	Soukoulis, M.	en
dc.date.accessioned	2015-11-24T17:31:38Z
dc.date.available	2015-11-24T17:31:38Z
dc.identifier.uri	https://olympias.lib.uoi.gr/jspui/handle/123456789/13609
dc.rights	Default Licence	-
dc.title	Tight-Binding Parameterization for Photonic Band Gap Materials	en
heal.abstract	The idea of the linear combination of atomic orbitals method, well known from the study of electrons, is extended to the classical wave case. The Mie resonances of the isolated scatterer in the classical wave case are analogous to the atomic orbitals in the electronic case. The matrix elements of the two-dimensional tight-binding (TB) Hamiltonian are obtained by fitting to ab initio results. The transferability of the TB model is tested by reproducing accurately the band structure of different 2D lattices, with and without defects, and at two different dielectric contrasts.	en
heal.access	campus	-
heal.fullTextAvailability	TRUE	-
heal.journalName	Phys Rev Lett	en
heal.journalType	peer reviewed	-
heal.language	en	-
heal.publicationDate	1998	-
heal.publisher	The American Physical Society	en
heal.recordProvider	Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών	el
heal.type	journalArticle	-
heal.type.el	Άρθρο Περιοδικού	el
heal.type.en	Journal article	en

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