Large-Yield Preparation of High-Electronic-Quatity Graphene by a Langmuir-Schaefer Approach
dc.contributor.author | Gengler, R. Y. N. | en |
dc.contributor.author | Veligura, A. | en |
dc.contributor.author | Enotiadis, A. | en |
dc.contributor.author | Diamanti, E. K. | en |
dc.contributor.author | Gournis, D. | en |
dc.contributor.author | Jozsa, C. | en |
dc.contributor.author | van Wees, B. J. | en |
dc.contributor.author | Rudolf, P. | en |
dc.date.accessioned | 2015-11-24T17:35:20Z | |
dc.date.available | 2015-11-24T17:35:20Z | |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14111 | |
dc.rights | Default Licence | - |
dc.subject | electrical properties | en |
dc.subject | graphene | en |
dc.subject | graphene oxide | en |
dc.subject | langmuir-schaefer films | en |
dc.subject | self-assembly | en |
dc.subject | room-temperature | en |
dc.subject | graphite oxide | en |
dc.subject | films | en |
dc.subject | sheets | en |
dc.subject | layers | en |
dc.subject | gas | en |
dc.title | Large-Yield Preparation of High-Electronic-Quatity Graphene by a Langmuir-Schaefer Approach | en |
heal.access | campus | - |
heal.fullTextAvailability | TRUE | - |
heal.identifier.primary | DOI 10.1002/smll.200901120 | - |
heal.identifier.secondary | <Go to ISI>://000274036400005 | - |
heal.journalName | Small | en |
heal.journalType | peer reviewed | - |
heal.language | en | - |
heal.publicationDate | 2010 | - |
heal.publisher | Wiley-VCH Verlag | en |
heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
heal.type | journalArticle | - |
heal.type.el | Άρθρο Περιοδικού | el |
heal.type.en | Journal article | en |
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