Potassium Adsorption on Mos2(0001) at Low-Temperature
dc.contributor.author | Kamaratos, M. | en |
dc.contributor.author | Vlachos, D. | en |
dc.contributor.author | Papageorgopoulos, C. A. | en |
dc.date.accessioned | 2015-11-24T18:38:31Z | |
dc.date.available | 2015-11-24T18:38:31Z | |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/17353 | |
dc.rights | Default Licence | - |
dc.subject | basal-plane | en |
dc.subject | mos2 | en |
dc.subject | cs | en |
dc.subject | cesium | en |
dc.subject | cs/mos2(0001) | en |
dc.subject | chemisorption | en |
dc.subject | oxidation | en |
dc.subject | behavior | en |
dc.subject | oxygen | en |
dc.subject | sims | en |
dc.title | Potassium Adsorption on Mos2(0001) at Low-Temperature | en |
heal.abstract | In this work we report on the properties of potassium on MoS2(0001) at 100 K as deduced from LEED, AES, EELS and TDS measurements. Potassium grows in a layer-by-layer mode on the surface of MoS2. The intercalation of K into MoS2, which occurs at RT, is negligible at LT. At low coverages K is deposited in ionic form, whereas for theta(K) > 0.5 there is clear evidence of metallization of the K overlayer on MoS2. | en |
heal.access | campus | - |
heal.fullTextAvailability | TRUE | - |
heal.identifier.secondary | <Go to ISI>://A1993KL07000004 | - |
heal.identifier.secondary | http://iopscience.iop.org/0953-8984/5/5/004/pdf/0953-8984_5_5_004.pdf | - |
heal.journalName | Journal of Physics-Condensed Matter | en |
heal.journalType | peer reviewed | - |
heal.language | en | - |
heal.publicationDate | 1993 | - |
heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
heal.type | journalArticle | - |
heal.type.el | Άρθρο Περιοδικού | el |
heal.type.en | Journal article | en |
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