Barium adsorption on hydrogenated Si (100)2 x 1 surfaces
| dc.contributor.author | Papageorgopoulos, D. S. | en |
| dc.contributor.author | Vlachos, C. A. | en |
| dc.date.accessioned | 2015-11-24T18:32:43Z | |
| dc.date.available | 2015-11-24T18:32:43Z | |
| dc.identifier.issn | 0953-8984 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16603 | |
| dc.rights | Default Licence | - |
| dc.title | Barium adsorption on hydrogenated Si (100)2 x 1 surfaces | en |
| heal.abstract | An experimental study of Ba and H adsorption on ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img2.gif] by Auger electron spectroscopy, thermal desorption spectroscopy, low-energy electron diffraction, electron energy loss spectroscopy, and work function measurements has been made. Measurements of hydrogen adsorption on a clean silicon surface have been made mainly for reference purposes. H on Si forms two different states, known as monohydride state ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img3.gif] and dihydride state ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img4.gif] . Preadsorption of H made the surface order more stable without changing the sticking coefficient of Ba on the Si surface. The results supported the double-layer (DL) model for the first Ba layer on the monohydrided Si surface. Ba adatoms up to ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img5.gif] ML on the dihydride phase were relaxed at symmetric and equivalent sites following the ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img6.gif] symmetry of the restored Si surface. TDS measurements showed that during Ba adsorption on the monohydride phase some of the H atoms were removed from their initial adsorption sites, and a new H energy state was formed at ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img7.gif] which was attributed to the weakening of the Si - H bond in the presence of Ba adatoms. When Ba deposition took place on the dihydride phase, two new H states were successively developed. The first state at ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img8.gif] was attributed to ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img9.gif] formation, and the subsequent one to a complex Ba - H - Si compound near ##IMG## [http://ej.iop.org/images/0953-8984/8/45/015/img10.gif] . The presence of hydrogen caused a considerable delay of barium overlayer metallization, in contrast to the early metallization of alkali on hydrogenated surfaces. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.secondary | http://stacks.iop.org/0953-8984/8/i=45/a=015 | - |
| heal.journalName | Journal of Physics: Condensed Matter | en |
| heal.journalType | peer reviewed | - |
| heal.publicationDate | 1996 | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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