Electrical properties of La(2)O(3) and HfO(2)/La(2)O(3) gate dielectrics for germanium metal-oxide-semiconductor devices
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Mavrou, G.
Galata, S.
Tsipas, P.
Sotiropoulos, A.
Panayiotatos, Y.
Dirnoulas, A.
Evangelou, E. K.
Seo, J. W.
Dieker, C.
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peer reviewed
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Journal of Applied Physics
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Germanium metal-insulator-semiconductor capacitors with La(2)O(3) dielectrics deposited at high temperature or subjected to post deposition annealing show good electrical characteristics, especially low density of interface states D(it) in the 10(11) eV(-1) cm(-2) range, which is an indication of good passivating proper-ties. However, the K value is estimated to be only about 9, while there is no,evidence for an interfacial layer. This is explained in terms of a spontaneous and strong reaction between La(2)O(3) and Ge substrate to form a low K and leaky La-Ge-O germanate over the entire film thickness, which, however, raises concerns about gate scalability. Combining a thin (similar to 1 nm) La(2)O(3) layer with thickef HfO(2) degrades the electrical characteristics, including Dit, but improves gate leakage and equivalent oxide thickness, indicating a better potential for scaling. Identifying suitable gate dielectric stack which combines good passivating/interfacial properties with good scalability remains a challenge. (c) 2008 American Institute of Physics.
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ge surface passivation, beam deposition, mos dielectrics, stacks, capacitors
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<Go to ISI>://000252890700097
http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000001014506000001
http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000103000001014506000001
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en
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Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών