Charge depletion of n(+)-In0.53Ga0.47As potential wells by background acceptor doping
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Date
Authors
Skuras, E.
Long, A. R.
Vogele, B.
Holland, M. C.
Stanley, C. R.
Johnson, E. A.
MacKinnon, A.
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American Institute of Physics
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peer reviewed
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Applied Physics Letters
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Charge depletion from 20 monolayers of n(+)-In0.53Ga0.47As, uniformly doped with Si donors and embedded within Be-doped In0.53Ga0.47As, has been studied at 1.2 K by magnetotransport measurements. Electron subband energies and densities associated with the n(+)-In0.53Ga0.47As potential well prove sensitive to the presence of the acceptors at concentrations up to 3 X 10(16) cm(-3). Agreement between the experimental data and the electronic subband structure calculated self-consistently by solving the one-dimensional Schrodinger and Poisson equations is excellent. The results suggest that intentional background acceptor doping could be a useful mechanism for tuning subband fillings and energies in potential wells formed by highly confined donors. (C) 1999 American Institute of Physics. [S0003-6951(99)00807-4].
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delta-doped gaas, insb, absorption, mbe
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<Go to ISI>://000078571400026
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en
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Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών