Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxy

Απλή σελίδα τεκμηρίου
dc.contributor.authorSkuras, E.en
dc.contributor.authorLong, A. R.en
dc.contributor.authorVogele, B.en
dc.contributor.authorHolland, M. C.en
dc.contributor.authorStanley, C. R.en
dc.contributor.authorJohnson, E. A.en
dc.contributor.authorvan der Burgt, M.en
dc.contributor.authorYaguchi, H.en
dc.contributor.authorSingleton, J.en
dc.date.accessioned2015-11-24T17:38:13Z
dc.date.available2015-11-24T17:38:13Z
dc.identifier.issn1098-0121-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14461
dc.rightsDefault Licence-
dc.subjectdelta-doped semiconductoren
dc.subjectelectron-concentrationen
dc.subjecttransport-propertiesen
dc.subjectsurface segregationen
dc.subjectdoping layersen
dc.subjectgaasen
dc.subjectmobilityen
dc.subjectsiliconen
dc.subjectmbeen
dc.subjectquantumen
dc.titleSi spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxyen
heal.abstractA detailed study is reported of Si spreading in slab- and delta-doped In0.53Ga0.47As grown lattice matched to InP substrates by molecular beam epitaxy at temperatures from approximate to 420 to approximate to 520 degrees C and doping concentrations From 2 X 10(12) to 1.5 X 10(13) cm(-2). The spreading is deduced by comparing the individual subband densities calculated from a fast Fourier transform analysis of Shubnikov-de Haas measurements with those derived from self-consistent calculations for which the doping profile width is used as a fitting parameter. The growth conditions for the epitaxial layers were designed to differentiate between surface segregation and thermal diffusion of the dopant atoms. Surface segregation is found to be the dominant mechanism causing Si spreading at growth temperatures higher than approximate to 470 degrees C. An ideal S-doping profile in In0.53Ga0.47As requires only the growth of a thin cap layer of undoped material at temperatures less than approximate to 470 degrees C over the delta doping. Holding the substrate temperature at values up to approximate to 520 degrees C during delta doping or the subsequent deposition of material over the cap does not produce any spreading. The three-band Kane model is found to provide an adequate description of the electronic properties of narrow Si doping profiles with carrier concentrations as high as 1.5 X 10(13) cm(-2) and Fermi energies close to 550 meV, the separation between the Gamma- and L-conduction band minima in In0.53Ga0.47As. The free electron concentrations from low magnetic field Hall measurements are consistently less than the sums of the individual subband densities derived from the Shubnikov-de Haas effect. In addition, for the same total Si doping density, the apparent electron concentration from Hall measurements is lower when the Si dopants are more confined compared with the case where the dopants are significantly spread. These apparent discrepancies are shown to follow from the different subband mobilities expected in these structures. From the data a direct measure of the standard deviation of carrier mobilities over subbands for a given structure is obtained. [S0163-1829(99)04515-4].en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDOI 10.1103/PhysRevB.59.10712-
heal.identifier.secondary<Go to ISI>://000080114800050-
heal.journalNamePhysical Review Ben
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1999-
heal.publisherAmerican Physical Societyen
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

Αρχεία

Πρωτότυπος φάκελος/πακέτο

Προβολή: 1 - 1 of 1
Μικρογραφία εικόνας
Ονομα:
Skuras-1999-Si spreading in lattice.pdf
Μέγεθος:
192.75 KB
Μορφότυπο:
Adobe Portable Document Format
Κατεβάστε

Φάκελος/Πακέτο αδειών

Προβολή: 1 - 1 of 1
Μικρογραφία εικόνας
Ονομα:
license.txt
Μέγεθος:
1.74 KB
Μορφότυπο:
Item-specific license agreed upon to submission
Περιγραφή:
Κατεβάστε

Συλλογές

Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)