Anisotropic piezoelectric effect in lateral surface superlattices
| dc.contributor.author | Skuras, E. | en |
| dc.contributor.author | Long, A. R. | en |
| dc.contributor.author | Larkin, I. A. | en |
| dc.contributor.author | Davies, J. H. | en |
| dc.contributor.author | Holland, M. C. | en |
| dc.date.accessioned | 2015-11-24T17:32:08Z | |
| dc.date.available | 2015-11-24T17:32:08Z | |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13675 | |
| dc.rights | Default Licence | - |
| dc.subject | dimensional electron-gas | en |
| dc.subject | magnetoresistance oscillations | en |
| dc.subject | potential modulation | en |
| dc.title | Anisotropic piezoelectric effect in lateral surface superlattices | en |
| heal.abstract | We have studied the potential induced by lateral surface superlattices deposited on a GaAs/AlGaAs heterostructure as a function of bias and orientation of the gates. By using the gates to null the total potential, we extracted the contribution to this potential in the absence of gate bias. Its angular dependence shows that it is dominated by strain from the gates coupled to the electrons by the piezoelectric effect. (C) 1997 American Institute of Physics. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.primary | Doi 10.1063/1.118301 | - |
| heal.identifier.secondary | <Go to ISI>://A1997WH86600027 | - |
| heal.journalName | Applied Physics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 1997 | - |
| heal.publisher | American Institute of Physics | en |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |