Interactions between Se, Cs and Si upon Se adsorption on Cs/Si(111)-7x7 surfaces
| dc.contributor.author | Papageorgopoulos, A. C. | en |
| dc.contributor.author | Kamaratos, M. | en |
| dc.date.accessioned | 2015-11-24T18:26:47Z | |
| dc.date.available | 2015-11-24T18:26:47Z | |
| dc.identifier.issn | 0953-8984 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/15953 | |
| dc.rights | Default Licence | - |
| dc.subject | silicon surfaces | en |
| dc.subject | si(111) | en |
| dc.subject | transition | en |
| dc.subject | desorption | en |
| dc.subject | w(110) | en |
| dc.subject | atoms | en |
| dc.title | Interactions between Se, Cs and Si upon Se adsorption on Cs/Si(111)-7x7 surfaces | en |
| heal.abstract | This report involves the room and elevated temperature ultrahigh-vacuum study of Se adsorbed on caesiated Si(l 1 l)-7 x 7 surfaces using Auger electron spectroscopy, low-energy electron diffraction, work-function measurements and thermal desorption spectroscopy. Adsorption of Se on Cs/Si(I 1 l)-7 x 7 surfaces initially occurs on the uncaesiated portions of the Si substrate and subsequently on the Cs adatoms. Heating the Se/Cs/Si(I 1 l)-7 x 7 surface causes Se to diffuse below the Cs adlayer to form strong dipoles with the alkali metal adatoms. The presence of Se increases the energy of binding of Cs to the substrate, and CsxSeySiz compound formation was observed with a binding energy of 2.8 eV/atom. The Cs-Se bonds most probably break at 1050 K, and two binding states of Cs and Se were observed after heating to temperatures > 1050 K. Their calculated binding energies are 3.0 and 3.2 eV/atom. The coadsorption of Cs and Se induces a high degree of surface disorder, while desorption most probably causes surface etching. Finally, the presence of Cs on the Si(l 1 l)-7 x 7 surface greatly suppresses the formation of SiSe2, detected when Se is adsorbed on clean Si(I 1 l)-7 x 7 surfaces. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.secondary | <Go to ISI>://000176400700003 | - |
| heal.identifier.secondary | http://iopscience.iop.org/0953-8984/14/21/301/pdf/0953-8984_14_21_301.pdf | - |
| heal.journalName | Journal of Physics-Condensed Matter | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2002 | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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