Fast 1V bootstrapped inverter suitable for standard CMOS technologies
| dc.contributor.author | Moisiadis, Y. | en |
| dc.contributor.author | Bouras, I. | en |
| dc.contributor.author | Efthymiou, A. | en |
| dc.contributor.author | Papadas, C. | en |
| dc.date.accessioned | 2015-11-24T17:03:09Z | |
| dc.date.available | 2015-11-24T17:03:09Z | |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/11135 | |
| dc.rights | Default Licence | - |
| dc.title | Fast 1V bootstrapped inverter suitable for standard CMOS technologies | en |
| heal.abstract | The authors propose a novel low-voltage bootstrapped inverter, designed in a standard high V-T 0.35 mu m CMOS technology. To enhance the snitching speed of a CMOS inverter at low-Voltage operation, an NMOS device is used in the pull-up section. A bootstrapping scheme is used to avoid the V-TN reduction of the output swing. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.journalName | Electronics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 1999 | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικής | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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