Electronic properties and bonding characteristics of AlN:Ag thin film nanocomposites
| dc.contributor.author | Lekka, C. E. | en |
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Komninou, P. | en |
| dc.contributor.author | Evangelakis, G. A. | en |
| dc.date.accessioned | 2015-11-24T17:33:50Z | |
| dc.date.available | 2015-11-24T17:33:50Z | |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13900 | |
| dc.rights | Default Licence | - |
| dc.subject | molecular-beam epitaxy | en |
| dc.subject | ab-initio | en |
| dc.subject | nitride | en |
| dc.subject | growth | en |
| dc.subject | pseudopotentials | en |
| dc.subject | 1st-principles | en |
| dc.subject | systems | en |
| dc.subject | gan | en |
| dc.title | Electronic properties and bonding characteristics of AlN:Ag thin film nanocomposites | en |
| heal.abstract | We present theoretical and experimental results on the bonding and structural characteristics of AlN:Ag thin film nanocomposites obtained by means of density functional theory (DFT) computations, high resolution transmission electron microscopy (HRTEM) observations, Auger electron spectroscopy (AES), and x-ray diffraction (XRD) measurements. From the theoretical calculations it was determined that the presence of the Ag substitutional of N or Al atoms affects the electronic density of states (EDOS) of the resulting systems. In particular, occupied energy states are introduced (between others) that lie within the energy gap of the AlN matrix due to Ag-d, Al-p (accompanied with a charge transfer from Al to Ag), Ag-p, and N-p hybridizations, respectively. The effect is predicted to be even more pronounced in the case of Ag nanoparticle inclusions affecting the EDOS of the composite system. These predictions were verified by the HRTEM images that gave unequivocal evidence for the presence and stability of Ag nanoparticles in the AlN matrix. In addition, the AES data suggested a metal-metal (Ag-Al) bonding preference, while the XRD patterns revealed that the atomic Ag dispersions in the AlN thin films results in a small elongation of the Wurtzite lattice, which is in agreement with the DFT predictions. These results may useful in tailoring the electronic response of AlN-based systems and the design of devices for various opto-electronic applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554443] | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.primary | Doi 10.1063/1.3554443 | - |
| heal.identifier.secondary | <Go to ISI>://000288387900100 | - |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2011 | - |
| heal.publisher | American Institute of Physics | en |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
Αρχεία
Φάκελος/Πακέτο αδειών
1 - 1 of 1
Φόρτωση...
- Ονομα:
- license.txt
- Μέγεθος:
- 1.74 KB
- Μορφότυπο:
- Item-specific license agreed upon to submission
- Περιγραφή: