Electron dynamics dependence on optimum dye loading for an efficient dye-sensitized solar cell

dc.contributor.authorKantonis, G.en
dc.contributor.authorStergiopoulos, T.en
dc.contributor.authorKatsoulidis, A. P.en
dc.contributor.authorPomonis, P. J.en
dc.contributor.authorFalaras, P.en
dc.date.accessioned2015-11-24T16:57:37Z
dc.date.available2015-11-24T16:57:37Z
dc.identifier.issn1010-6030-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/10599
dc.rightsDefault Licence-
dc.subjecttitania annealingen
dc.subjectelectron transporten
dc.subjectrecombinationen
dc.subjectdye loadingen
dc.subjectdye-sensitized solar cellsen
dc.subjecttio2 filmsen
dc.subjectnanocrystalline semiconductorsen
dc.subjectphotocatalytic activityen
dc.subjectannealing temperatureen
dc.subjectcharge-transferen
dc.subjectrecombinationen
dc.subjectdiffusionen
dc.subjecttransporten
dc.subjectanataseen
dc.subjectadsorptionen
dc.titleElectron dynamics dependence on optimum dye loading for an efficient dye-sensitized solar cellen
heal.abstractIncreasing surface area and optimum dye loading are among the prerequisites for an efficient TiO(2)-based dye-sensitized solar cell (DSC), since they improve light harvesting but, at the same time, affect, in a variant way the electron dynamics in the semiconductor. Into this context, in this work, the interdependence of these two effects was investigated. The thermal annealing conditions of nanocrystalline titania films were modified between 400 and 550 degrees C in order to vary the crystallinity and the aggregation/sintering degree of the semiconductor particles. The annealing effects on the structural and surface parameters of the films were determined and the electron dynamics inside the semiconductor were elucidated. The film properties were found to correlate with the photoelectric conversion efficiencies of the corresponding DSCs in terms of light harvesting efficiency, electron transport, recombination and trapping at surface states. Despite higher dye loading, a relatively low efficiency (5.3%) was attained at the temperature of 400 degrees C, due to insufficient neck growth and the presence of surface states that were not removed by annealing. On the contrary, the highest efficiency (6.4%) was attained at 550 degrees C, where high values of electron diffusion coefficients and enhanced electron lifetimes were observed despite a significantly lower dye loading. The above results point out the significance of properly controlling both light harvesting and electron dynamics in the photoelectrode for efficient dye sensitization of a large band gap semiconductor. (C) 2010 Elsevier B.V. All rights reserved.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDOI 10.1016/j.jphotochem.2010.10.015-
heal.identifier.secondary<Go to ISI>://000286952400032-
heal.identifier.secondaryhttp://ac.els-cdn.com/S1010603010004296/1-s2.0-S1010603010004296-main.pdf?_tid=d5cd228bbd5f59589a2fc648500c7eb6&acdnat=1333036308_a2bc0afac1d850cce310f3c1994c411c-
heal.journalNameJournal of Photochemistry and Photobiology a-Chemistryen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2011-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Χημείαςel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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