Observation and Control of the Amphoteric Behavior of Si-Doped Insb Grown on Gaas by Mbe

dc.contributor.authorParker, S. D.en
dc.contributor.authorWilliams, R. L.en
dc.contributor.authorDroopad, R.en
dc.contributor.authorStradling, R. A.en
dc.contributor.authorBarnham, K. W. J.en
dc.contributor.authorHolmes, S. N.en
dc.contributor.authorLaverty, J.en
dc.contributor.authorPhillips, C. C.en
dc.contributor.authorSkuras, E.en
dc.contributor.authorThomas, R.en
dc.contributor.authorZhang, X.en
dc.contributor.authorStatonbevan, A.en
dc.contributor.authorPashley, D. W.en
dc.date.accessioned2015-11-24T17:36:43Z
dc.date.available2015-11-24T17:36:43Z
dc.identifier.issn0268-1242-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14275
dc.rightsDefault Licence-
dc.titleObservation and Control of the Amphoteric Behavior of Si-Doped Insb Grown on Gaas by Mbeen
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDoi 10.1088/0268-1242/4/8/010-
heal.identifier.secondary<Go to ISI>://A1989AK90000010-
heal.journalNameSemiconductor Science and Technologyen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1989-
heal.publisherIOP Publishing Ltden
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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