Electronic and optical properties of a-C from tight-binding molecular dynamics simulations

dc.contributor.authorMathioudakis, C.en
dc.contributor.authorKopidakis, G.en
dc.contributor.authorKelires, P. C.en
dc.contributor.authorPatsalas, P.en
dc.contributor.authorGioti, M.en
dc.contributor.authorLogothetidis, S.en
dc.date.accessioned2015-11-24T17:33:49Z
dc.date.available2015-11-24T17:33:49Z
dc.identifier.issn0040-6090-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13899
dc.rightsDefault Licence-
dc.subjectoptical transitionen
dc.subjecttauc gap analysisen
dc.subjectdielectric functionen
dc.subjectamorphous-carbon filmsen
dc.subjectdiamonden
dc.subjectconstantsen
dc.subjectmodelen
dc.titleElectronic and optical properties of a-C from tight-binding molecular dynamics simulationsen
heal.abstractAlthough the structural and mechanical properties of a-C have been theoretically investigated in detail, this is not so for the optoelectronic properties. Many issues remain unclear, such as the influence of disorder and intrinsic defects on the localization of the electron states and on the optical transitions. Here, as a first step towards solving this kind of problems, we present a computational approach to the study of the optoelectronic properties of a-C. This is based on tight-binding (TB) molecular dynamics (TBMD) simulations using a reliable environment-dependent Hamiltonian. The a-C networks were generated by quenching from the liquid. The electronic density of states of all simulated networks show that the material is semiconducting, and that the gap is clearly controlled by the separation of the pi and pi* peaks. A Tauc gap analysis shows that the optical gap varies between 2.7 and 0.3 eV We analyze the dielectric functions as a function of the sp(3) fraction. We also compare the computational results with experimental dielectric function spectra revealing considerable consistency between theory and experiment. (c) 2004 Elsevier BY. All rights reserved.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDOI 10.1016/j.tsf.2004.11.133-
heal.identifier.secondary<Go to ISI>://000229681500026-
heal.journalNameThin Solid Filmsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2005-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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