Adsorption of elemental S on Si(100)-2x1 surfaces
| dc.contributor.author | Papageorgopoulos, A. | en |
| dc.contributor.author | Kamaratos, M. | en |
| dc.date.accessioned | 2015-11-24T18:33:17Z | |
| dc.date.available | 2015-11-24T18:33:17Z | |
| dc.identifier.issn | 0039-6028 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/16708 | |
| dc.rights | Default Licence | - |
| dc.subject | adsorption kinetics | en |
| dc.subject | atom-solid interactions, scattering, diffraction | en |
| dc.subject | auger electron spectroscopy | en |
| dc.subject | chemisorption | en |
| dc.subject | low energy electron diffraction (leed) | en |
| dc.subject | low index single crystal surfaces | en |
| dc.subject | semiconducting surfaces | en |
| dc.subject | silicon | en |
| dc.subject | sulphides | en |
| dc.subject | surface electronic phenomena | en |
| dc.subject | thermal desorption spectroscopy | en |
| dc.subject | work function measurements | en |
| dc.subject | scanning-tunneling-microscopy | en |
| dc.subject | electronic-structure | en |
| dc.subject | si(001) surface | en |
| dc.subject | sulfur | en |
| dc.subject | ge(111) | en |
| dc.title | Adsorption of elemental S on Si(100)-2x1 surfaces | en |
| heal.abstract | We have studied the adsorption of elemental S on Si(100)-2 X 1 surfaces by LEED, AES, TDS, and WF measurements in UHV. The adsorption of S at room temperature causes the surface restoration of the reconstructed Si(100)-2 X 1 substrate to its original bulk-terminated surface, Si(100)-1 X 1. The S adsorbate follows the substrate structures, i.e. it forms initially a (2 X 1) up to 0.5 ML and subsequently a (1 X 1). Above 1 ML, sulfur is imbedded into the Si bulk near the surface. The sticking coefficient of S on Si(100) surface is constant, S = 1, up to 2 ML. Deposition of S at RT up to 1 ML increases the WF of the surface by about 0.30 +/- 0.05 eV. Above 1 ML, as the S is diffused into the Si bulk, the WF decreases, The TDS measurements show that S is desorbed as SiS molecule with a single TD peak near 585 degrees C. This may indicate that the Si-S bond energy is greater than that of Si-Si which may be the dominant cause of the substrate restoration. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.secondary | <Go to ISI>://A1996UV25400069 | - |
| heal.journalName | Surface Science | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 1996 | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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