The Behavior of K on the Basal-Plane of Mos2

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dc.contributor.authorPapageorgopoulos, C. A.en
dc.contributor.authorKamaratos, M.en
dc.contributor.authorKennou, S.en
dc.contributor.authorVlachos, D.en
dc.date.accessioned2015-11-24T18:34:12Z
dc.date.available2015-11-24T18:34:12Z
dc.identifier.issn0039-6028-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/16890
dc.rightsDefault Licence-
dc.subjectcsen
dc.subjectadsorptionen
dc.subjectw(110)en
dc.subjectcesiumen
dc.subjectsurfacesen
dc.subjectoxygenen
dc.subjecto2en
dc.titleThe Behavior of K on the Basal-Plane of Mos2en
heal.abstractThe adsorption of K on MoS2(0001) has been investigated by LEED, AES, TDS and WF measurements. The results suggest that the initial sticking coefficient of K on MoS2 is less than 1 (approximately 0.7). From the known flux and sticking coefficient, the K coverage could be determined at any time. At low coverage, K forms strongly ionized isolated adatoms as on metals and other semiconductors. However, with increasing coverage, K atoms form 2D clusters which with more K adsorption coalesce and grow to 3D clusters. The growth of K to 3D clusters contrasts the uniform deposition exhibited on metals and other semiconductors.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.secondary<Go to ISI>://A1991FY12600209-
heal.journalNameSurface Scienceen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1991-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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