Thickness-dependent glass transition temperature of thin resist films for high resolution lithography
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Date
Authors
Marceau, S.
Tortai, J. H.
Tillier, J.
Vourdas, N.
Gogolides, E.
Raptis, I.
Beltsios, K.
van Werden, K.
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Elsevier
Abstract
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peer reviewed
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Microelectronic Engineering
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Description
Fabrication of devices at the 45 nm node and beyond requires resist film with a thickness below 150 nm. The physicochemical properties of thin films, such as glass transition, are in general different from the bulk ones and new characterization tools are often necessary. The glass transition of thin resist films (T-g(film)) has been studied by two techniques: spectroscopic ellipsometry and multi wavelength optical interferometry. Films of simple homopolymers (PS, PMMA) and a EUV polymer platform supplied by AZ Electronic Materials were studied and their T-g(film) values were compared with DSC measurements of the bulk material. A variation of the glass transition temperature was detected with both techniques for PS and PMMA when the thickness of the film decreases below 100 nm. Indications for additional interesting interactions for moderately thick films (100-300 nm) especially in the case of PMMA are reported. (c) 2006 Published by Elsevier B.V.
Description
Keywords
resist, lithography, thin films, interferometry, ellipsometry, ultrathin polymer-films
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<Go to ISI>://000237581900106
http://ac.els-cdn.com/S0167931706002619/1-s2.0-S0167931706002619-main.pdf?_tid=a451592539bc425b8d19bc9033110612&acdnat=1339662570_ad10d5d2e9bb98497784d192ad011652
http://ac.els-cdn.com/S0167931706002619/1-s2.0-S0167931706002619-main.pdf?_tid=a451592539bc425b8d19bc9033110612&acdnat=1339662570_ad10d5d2e9bb98497784d192ad011652
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en
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Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών