Thickness-dependent glass transition temperature of thin resist films for high resolution lithography

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dc.contributor.authorMarceau, S.en
dc.contributor.authorTortai, J. H.en
dc.contributor.authorTillier, J.en
dc.contributor.authorVourdas, N.en
dc.contributor.authorGogolides, E.en
dc.contributor.authorRaptis, I.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorvan Werden, K.en
dc.date.accessioned2015-11-24T17:31:36Z
dc.date.available2015-11-24T17:31:36Z
dc.identifier.issn0167-9317-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13603
dc.rightsDefault Licence-
dc.subjectresisten
dc.subjectlithographyen
dc.subjectthin filmsen
dc.subjectinterferometryen
dc.subjectellipsometryen
dc.subjectultrathin polymer-filmsen
dc.titleThickness-dependent glass transition temperature of thin resist films for high resolution lithographyen
heal.abstractFabrication of devices at the 45 nm node and beyond requires resist film with a thickness below 150 nm. The physicochemical properties of thin films, such as glass transition, are in general different from the bulk ones and new characterization tools are often necessary. The glass transition of thin resist films (T-g(film)) has been studied by two techniques: spectroscopic ellipsometry and multi wavelength optical interferometry. Films of simple homopolymers (PS, PMMA) and a EUV polymer platform supplied by AZ Electronic Materials were studied and their T-g(film) values were compared with DSC measurements of the bulk material. A variation of the glass transition temperature was detected with both techniques for PS and PMMA when the thickness of the film decreases below 100 nm. Indications for additional interesting interactions for moderately thick films (100-300 nm) especially in the case of PMMA are reported. (c) 2006 Published by Elsevier B.V.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDOI 10.1016/j.mee.2006.01.227-
heal.identifier.secondary<Go to ISI>://000237581900106-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0167931706002619/1-s2.0-S0167931706002619-main.pdf?_tid=a451592539bc425b8d19bc9033110612&acdnat=1339662570_ad10d5d2e9bb98497784d192ad011652-
heal.journalNameMicroelectronic Engineeringen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2006-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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