X-ray and neutron reflectivity studies of self-assembled InAs quantum dots stacks on GaAs (100)

dc.contributor.authorAnagnostopoulos, D. F.en
dc.contributor.authorSkuras, E.en
dc.contributor.authorStanley, C.en
dc.contributor.authorBorchert, G. L.en
dc.contributor.authorValicu, R.en
dc.date.accessioned2015-11-24T17:32:02Z
dc.date.available2015-11-24T17:32:02Z
dc.identifier.issn0925-8388-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13659
dc.rightsDefault Licence-
dc.subjectquantum dotsen
dc.subjectx-ray reflectivityen
dc.subjectneutron reflectivityen
dc.subjectatomic scale structureen
dc.subjectsolar-cellsen
dc.titleX-ray and neutron reflectivity studies of self-assembled InAs quantum dots stacks on GaAs (100)en
heal.abstractX-ray and neutron reflectometry are used for structural characterization of self-assembled InAs quantum dot stacks on GaAs (1 0 0), grown by molecular beam epitaxy. The macroscopic density profile of uncapped InAs layer is extracted and shows a three-dimensional pyramidal structure of maximum height of 5 nm. The ultra thin InAs buried layers are well approximated as a two-dimensional structure, indicating amalgamation between InAs and GaAs. The interface roughness of the capping layers is found smaller than 0.5 nm, showing the high quality of the epitaxial surfaces. The thicknesses of the capping GaAs layers are extracted in atomic scale level and are found in fine agreement with the nominal values. (C) 2008 Published by Elsevier B.V.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDOI 10.1016/j.jallcom.2008.08.113-
heal.identifier.secondary<Go to ISI>://000270619600099-
heal.journalNameJournal of Alloys and Compoundsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2009-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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