The kinetics of sputtered deposited carbon on silicon: a phenomenological model
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Date
Authors
Galdikas, A.
Logothetidis, S.
Patsalas, P.
Gioti, M.
Pranevicius, L.
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Elsevier
Abstract
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peer reviewed
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Journal name
Diamond and Related Materials
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Description
A phenomenological model based on the rate equations for the carbon sputter deposition on Si surface is proposed. The processes of carbon adsorption, formation of SiC and transition from sp(2) to sp(3) sites induced by low energy ion bombardment are included. The calibration of the model was performed with the experimental results. The amorphous carbon films were deposited by magnetron sputtering of graphite with Ar+ ions. The energy of ions bombarding the growing film was varied by applying a bias voltage on the substrate. It is shown that the non-monotonous kinetics of film growth is determined by the variations of surface composition at different stages of growth. (C) 1999 Elsevier Science S.A. All rights reserved.
Description
Keywords
amorphous carbon, deposition, modeling, ellipsometry, a-c-h, thin-films, optical-properties, diamond, stress
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<Go to ISI>://000080437000073
Language
en
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Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών