The kinetics of sputtered deposited carbon on silicon: a phenomenological model

dc.contributor.authorGaldikas, A.en
dc.contributor.authorLogothetidis, S.en
dc.contributor.authorPatsalas, P.en
dc.contributor.authorGioti, M.en
dc.contributor.authorPranevicius, L.en
dc.date.accessioned2015-11-24T17:31:18Z
dc.date.available2015-11-24T17:31:18Z
dc.identifier.issn0925-9635-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13569
dc.rightsDefault Licence-
dc.subjectamorphous carbonen
dc.subjectdepositionen
dc.subjectmodelingen
dc.subjectellipsometryen
dc.subjecta-c-hen
dc.subjectthin-filmsen
dc.subjectoptical-propertiesen
dc.subjectdiamonden
dc.subjectstressen
dc.titleThe kinetics of sputtered deposited carbon on silicon: a phenomenological modelen
heal.abstractA phenomenological model based on the rate equations for the carbon sputter deposition on Si surface is proposed. The processes of carbon adsorption, formation of SiC and transition from sp(2) to sp(3) sites induced by low energy ion bombardment are included. The calibration of the model was performed with the experimental results. The amorphous carbon films were deposited by magnetron sputtering of graphite with Ar+ ions. The energy of ions bombarding the growing film was varied by applying a bias voltage on the substrate. It is shown that the non-monotonous kinetics of film growth is determined by the variations of surface composition at different stages of growth. (C) 1999 Elsevier Science S.A. All rights reserved.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDoi 10.1016/S0925-9635(98)00385-9-
heal.identifier.secondary<Go to ISI>://000080437000073-
heal.journalNameDiamond and Related Materialsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1999-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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