Structural and electrical properties of HfO(2)/Dy(2)O(3) gate stacks on Ge substrates

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dc.contributor.authorEvangelou, E. K.en
dc.contributor.authorRahman, M. S.en
dc.contributor.authorAndroulidakis, I. I.en
dc.contributor.authorDimoulas, A.en
dc.contributor.authorMavrou, G.en
dc.contributor.authorGiannakopoulos, K. P.en
dc.contributor.authorAnagnostopoulos, D. F.en
dc.contributor.authorValicu, R.en
dc.contributor.authorBorchert, G. L.en
dc.date.accessioned2015-11-24T18:34:50Z
dc.date.available2015-11-24T18:34:50Z
dc.identifier.issn0040-6090-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/16998
dc.rightsDefault Licence-
dc.subjectgermaniumen
dc.subjectdy(2)o(3)en
dc.subjecthfo(2)en
dc.subjectrare-earth oxidesen
dc.subjecttransmission electron microscopyen
dc.subjectx-ray reflectivityen
dc.subjectelectrical properties and measurementsen
dc.subjectgermanium mos dielectricsen
dc.subjecthfo2 layersen
dc.subjectinterfaceen
dc.subjectoxideen
dc.subjectcapacitorsen
dc.subjectmosfetsen
dc.subjectdevicesen
dc.subjectpassivationen
dc.subjectdepositionen
dc.subjectsurfacesen
dc.titleStructural and electrical properties of HfO(2)/Dy(2)O(3) gate stacks on Ge substratesen
heal.abstractIn the present work we report on the structural and electrical properties of metal oxide semiconductor (MOS) devices with HfO(2)/Dy(2)O(3) gate stack dielectrics, deposited by molecular beam deposition on p-type germanium (Ge) substrates. Structural characterization by means of high-resolution Transmission Electron Microscopy (TEM) and X-ray diffraction measurements demonstrate the nanocrystalline nature of the films. Moreover, the interpretation of the X-ray reflectivity measurements reveals the spontaneous growth of an ultrathin germanium oxide interfacial layer which was also confirmed by TEM. Subsequent electrical characterization measurements on Pt/HfO(2)/Dy(2)O(3)/p-Ge MOS diodes show that a combination of a thin Dy(2)O(3) buffer layer with a thicker HfO(2) on top can give very good results, such as equivalent oxide thickness values as low as 1.9 nm, low density of interfacial defects (2-5 x 10(12) eV(-1) cm(-2)) and leakage currents with typical current density values around 15 nA/cm(2) at V(g)=V(FB)-1V. (C) 2009 Elsevier B.V. All rights reserved.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDOI 10.1016/j.tsf.2009.10.160-
heal.identifier.secondary<Go to ISI>://000278064600068-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0040609009018446/1-s2.0-S0040609009018446-main.pdf?_tid=14effd51ea3786a451c9d0943ff4e602&acdnat=1334220025_508eb8dc63afd1ec2df42bb61b752d54-
heal.journalNameThin Solid Filmsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2010-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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