MOS memory structures by very-low-energy-implanted Si in thin SiO2
Loading...
Date
Authors
Dimitrakis, P.
Kapetanakis, E.
Normand, P.
Skarlatos, D.
Tsoukalas, D.
Beltsios, K.
Claverie, A.
Benassayag, G.
Bonafos, C.
Chassaing, D.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Type
Type of the conference item
Journal type
peer reviewed
Educational material type
Conference Name
Journal name
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Book name
Book series
Book edition
Alternative title / Subtitle
Description
The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 degreesC) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages. (C) 2003 Elsevier Science B.V. All rights reserved.
Description
Keywords
si, nanocrystals, ion implantation, memory, single-electron
Subject classification
Citation
Link
<Go to ISI>://000184394900004
http://ac.els-cdn.com/S0921510702006888/1-s2.0-S0921510702006888-main.pdf?_tid=8765ad619c998cc718b6284c13cafac6&acdnat=1339662566_ec56a0046ca11f5d462133bee0c72dc3
http://ac.els-cdn.com/S0921510702006888/1-s2.0-S0921510702006888-main.pdf?_tid=8765ad619c998cc718b6284c13cafac6&acdnat=1339662566_ec56a0046ca11f5d462133bee0c72dc3
Language
en
Publishing department/division
Advisor name
Examining committee
General Description / Additional Comments
Institution and School/Department of submitter
Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών