MOS memory structures by very-low-energy-implanted Si in thin SiO2

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dc.contributor.authorDimitrakis, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorNormand, P.en
dc.contributor.authorSkarlatos, D.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorClaverie, A.en
dc.contributor.authorBenassayag, G.en
dc.contributor.authorBonafos, C.en
dc.contributor.authorChassaing, D.en
dc.contributor.authorCarrada, M.en
dc.contributor.authorSoncini, V.en
dc.date.accessioned2015-11-24T17:36:15Z
dc.date.available2015-11-24T17:36:15Z
dc.identifier.issn0921-5107-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14226
dc.rightsDefault Licence-
dc.subjectsien
dc.subjectnanocrystalsen
dc.subjection implantationen
dc.subjectmemoryen
dc.subjectsingle-electronen
dc.titleMOS memory structures by very-low-energy-implanted Si in thin SiO2en
heal.abstractThe electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 degreesC) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages. (C) 2003 Elsevier Science B.V. All rights reserved.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDoi 10.1016/S0921-5107(02)00688-8-
heal.identifier.secondary<Go to ISI>://000184394900004-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0921510702006888/1-s2.0-S0921510702006888-main.pdf?_tid=8765ad619c998cc718b6284c13cafac6&acdnat=1339662566_ec56a0046ca11f5d462133bee0c72dc3-
heal.journalNameMaterials Science and Engineering B-Solid State Materials for Advanced Technologyen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2003-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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