Nitrogen induced states at the CNx/Si interface
| dc.contributor.author | Evangelou, E. | en |
| dc.contributor.author | Konofaos, N. | en |
| dc.contributor.author | Gioti, M. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.date.accessioned | 2015-11-24T18:39:54Z | |
| dc.date.available | 2015-11-24T18:39:54Z | |
| dc.identifier.issn | 0921-5107 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/17518 | |
| dc.rights | Default Licence | - |
| dc.subject | carbon nitrides | en |
| dc.subject | interface states | en |
| dc.subject | mis devices | en |
| dc.subject | admittance spectroscopy | en |
| dc.subject | rf magnetron | en |
| dc.subject | sputtering thin films | en |
| dc.subject | amorphous-carbon | en |
| dc.subject | thin-films | en |
| dc.subject | silicon | en |
| dc.title | Nitrogen induced states at the CNx/Si interface | en |
| heal.abstract | The deposition of carbon nitride (CNx) films onto n-type silicon wafers by rf magnetron sputtering at room temperature produces insulating films suitable for electronic applications. The traps at the CNx/Si interface may hamper the creation of electronic devices especially in VLSI applications. While amorphous carbon films have been studied for that purpose, the introduction of nitrogen inside the growth chamber adds an extra parameter in the process. CNx films were grown with the N-2 concentration ranging between 1 and 25%. The effect of various N-2 concentrations on the interface states is investigated in the present work. The interface states were characterized by admittance spectroscopy on metal-insulator-semiconductor (MIS) devices created by the deposition of A1 contacts. The density of interface states (D-it) and the corresponding time constants were obtained by the conductance technique. The D-it was found to extend between 5.5 x 10(12) and 2.0 x 10(13) eV(-1) cm(-2) depending on the N-2 concentration. Annealing at 350 degrees C reduced these values. Typical values for the time constants were around 10(-4) s indicating that the traps are located close to the silicon midgap. (C) 2000 Elsevier Science S.A. All rights reserved. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.secondary | <Go to ISI>://000085529700060 | - |
| heal.journalName | Materials Science and Engineering B-Solid State Materials for Advanced Technology | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2000 | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
Αρχεία
Φάκελος/Πακέτο αδειών
1 - 1 of 1
Φόρτωση...
- Ονομα:
- license.txt
- Μέγεθος:
- 1.74 KB
- Μορφότυπο:
- Item-specific license agreed upon to submission
- Περιγραφή: