Preparation of thin coatings of titanium compounds with ion implantation

Απλή σελίδα τεκμηρίου
dc.contributor.authorMozetic, M.en
dc.contributor.authorZalar, A.en
dc.contributor.authorJagielski, J.en
dc.contributor.authorEvangelakis, G. A.en
dc.contributor.authorDrobnic, M.en
dc.contributor.authorChab, V.en
dc.date.accessioned2015-11-24T18:38:27Z
dc.date.available2015-11-24T18:38:27Z
dc.identifier.issn0352-9045-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/17340
dc.rightsDefault Licence-
dc.subjectmicroelectronicsen
dc.subjection implantationen
dc.subjectsurface technologiesen
dc.subjectsurface engineeringen
dc.subjectsurface coatingsen
dc.subjectthin coatingsen
dc.subjectsemiconductor compoundsen
dc.subjectcomputer simulationsen
dc.subjectsrim ibm softwareen
dc.subjectstopping and range of ions in matteren
dc.subjectti compoundsen
dc.subjecttitanium compoundsen
dc.subjectti oxidesen
dc.subjecttitanium oxidesen
dc.subjectti nitridesen
dc.subjecttitanium nitridesen
dc.subjection beamsen
dc.subjectirradiation damagesen
dc.subjectthin filmsen
dc.subjectaesen
dc.subjectauger electron spectroscopyen
dc.subjectaes depth profilingen
dc.titlePreparation of thin coatings of titanium compounds with ion implantationen
heal.abstractThe growth of thin coatings of titanium oxide and nitride during ion implantation of respective ions into titanium substrate was studied theoretically and experimentally. The IBM SRIM software was used to determine the concentration profiles of implanted ions. the sputtering rate, probability of back - scattering and ion energy loss mechanisms. Theoretical results were compared with experiments. Samples of pure titanium plates were carefully polished and exposed to a flux of oxygen and nitrogen ions with the kinetic energy of 100 keV per molecule (50 keV per atom). The ion doses were 5X10(16), 1X10(17), 2.5X10(17), 5X10(17), 5X10(17), 1X10(18) atoms/cm(2). Depth profiles of the samples were determined by the AES method. Both the theory and experiment showed that the ion range at the low dose was about 90 nm for the case of nitrogen, and 80 nm for the case of oxygen, with depth distribution typical for ion implantation. Experimental results showed that a layer of titanium compound with a constant composition was formed at the ion dose above 7.5X10(17) atoms/cm(2).en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.secondary<Go to ISI>://000084579200001-
heal.journalNameInformacije Midem-Journal of Microelectronics Electronic Components and Materialsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1999-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

Αρχεία

Φάκελος/Πακέτο αδειών

Προβολή: 1 - 1 of 1
Μικρογραφία εικόνας
Ονομα:
license.txt
Μέγεθος:
1.74 KB
Μορφότυπο:
Item-specific license agreed upon to submission
Περιγραφή:
Κατεβάστε

Συλλογές

Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)