Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures
| dc.contributor.author | Skuras, E. | en |
| dc.contributor.author | Stanley, C. R. | en |
| dc.date.accessioned | 2015-11-24T17:34:24Z | |
| dc.date.available | 2015-11-24T17:34:24Z | |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13956 | |
| dc.rights | Default Licence | - |
| dc.subject | molecular-beam epitaxy | en |
| dc.subject | electronic-properties | en |
| dc.subject | photoreflectance | en |
| dc.subject | inalas | en |
| dc.subject | in0.52al0.48as | en |
| dc.subject | heterojunction | en |
| dc.subject | ingaas | en |
| dc.subject | layers | en |
| dc.title | Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures | en |
| heal.abstract | Fermi level pinning at the surface of the undoped In0.52Al0.48As Schottky layer in high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures has been studied. The electron subband densities for samples prepared with different Schottky layer thicknesses have been deduced from fast Fourier transform analyses of 1.5 K Shubnikov-de Haas data. These results have been compared with densities calculated self-consistently using the free surface potential Phi(S) as the only fitting parameter. Good agreement between theory and experiment is achieved for a surface Fermi energy pinned 0.65 +/- 0.05 eV below the In0.52Al0.48As Gamma-conduction band minimum. (c) 2007 American Institute of Physics. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.primary | Doi 10.1063/1.2716844 | - |
| heal.identifier.secondary | <Go to ISI>://000245317100109 | - |
| heal.journalName | Applied Physics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2007 | - |
| heal.publisher | American Institute of Physics | en |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |