Plasma energy and work function of conducting transition metal nitrides for electronic applications

dc.contributor.authorMatenoglou, G. M.en
dc.contributor.authorKoutsokeras, L. E.en
dc.contributor.authorPatsalas, P.en
dc.date.accessioned2015-11-24T17:37:19Z
dc.date.available2015-11-24T17:37:19Z
dc.identifier.issn0003-6951-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14340
dc.rightsDefault Licence-
dc.subjectelectrical conductivityen
dc.subjectlattice constantsen
dc.subjectmetallurgyen
dc.subjectsemiconductor thin filmsen
dc.subjectsolid-state plasmaen
dc.subjectstoichiometryen
dc.subjectwork functionen
dc.subjectthin-filmsen
dc.subjectmicrostructureen
dc.subjectmetallizationen
dc.subjectcontactsen
dc.titlePlasma energy and work function of conducting transition metal nitrides for electronic applicationsen
heal.abstractThe combination of electrical conductivity, chemical and metallurgical stability, refractory character, having lattice constants that are close to those of III-nitrides makes transition metal nitrides promising candidates for electronics and device applications. We study the structure, stability, and the plasma energy of stoichiometric, transition metal nitrides of similar crystal quality as well as the widest variety of their ternaries ever reported. We establish the phase spaces of the plasma energy (6.9-10.5 eV) and the work function (3.7-5.1 eV) of these complex nitrides with their lattice constant (0.416-0.469 nm) and we investigate the limits of their applications.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primaryDoi 10.1063/1.3119694-
heal.identifier.secondary<Go to ISI>://000265285200042-
heal.journalNameApplied Physics Lettersen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2009-
heal.publisherAmerican Institute of Physicsen
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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