Controlling the Orientation, Edge Geometry, and Thickness of Chemical Vapor Deposition Graphene

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dc.contributor.authorMurdock, A. T.en
dc.contributor.authorKoos, A.en
dc.contributor.authorBritton, T.en
dc.contributor.authorHouben, L.en
dc.contributor.authorBatten, T.en
dc.contributor.authorZhang, T.en
dc.contributor.authorWilkinson, A. J.en
dc.contributor.authorDunin-Borkowski, R. E.en
dc.contributor.authorLekka, Ch. E.en
dc.contributor.authorGrobert, N.en
dc.date.accessioned2015-11-24T17:32:44Z
dc.date.available2015-11-24T17:32:44Z
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13774
dc.rightsDefault Licence-
dc.subjectgrapheneen
dc.subjectCVDen
dc.subjectCuen
dc.subjectorientationen
dc.subjectcrystallographyen
dc.subjectEBSDen
dc.titleControlling the Orientation, Edge Geometry, and Thickness of Chemical Vapor Deposition Grapheneen
heal.abstractWe report that the shape, orientation, edge geometry, and thickness of chemical vapor deposition graphene domains can be controlled by the crystallographic orientations of Cu substrates. Under low-pressure conditions, single-layer graphene domains align with zigzag edges parallel to a single 101 direction on Cu(111) and Cu(101), while bilayer domains align to two directions on Cu(001). Under atmospheric pressure conditions, hexagonal domains also preferentially align. This discovery can be exploited to generate high-quality, tailored graphene with controlled domain thickness, orientations, edge geometries, and grain boundaries.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.primary10.1021/nn3049297-
heal.identifier.secondaryhttp://pubs.acs.org/doi/abs/10.1021/nn3049297-
heal.journalNameACS Nanoen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2013-
heal.publisherAmerican Chemical Societyen
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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