Device characterization for amorphous diamond-like carbon-silicon heterojunctions

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dc.contributor.authorKonofaos, N.en
dc.contributor.authorEvangelou, E.en
dc.contributor.authorThomas, C. B.en
dc.date.accessioned2015-11-24T18:30:22Z
dc.date.available2015-11-24T18:30:22Z
dc.identifier.issn0021-8979-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/16364
dc.rightsDefault Licence-
dc.titleDevice characterization for amorphous diamond-like carbon-silicon heterojunctionsen
heal.abstractWe report here on the electrical characterization of Al/a-C:H/n-Si devices, where the a-C:H films were ion implanted with boron. The current-voltage characteristics versus temperature demonstrated the creation of p-n heterojunctions and Schottky diodes. Maximum current outputs were reached faster for higher temperatures. Lower doses of boron implants produced Schottky diode characteristics, with a current saturation in the forward region due to the existing barrier. The values of the output currents increased with temperature and implanted dose. (C) 1998 American Institute of Physics. [S0021-8979(98)00120-0]en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.secondary<Go to ISI>://000076185100089-
heal.identifier.secondaryhttp://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000084000008004634000001-
heal.journalNameJournal of Applied Physicsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1998-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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