MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

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dc.contributor.authorNormand, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorKamoulakos, G.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorVan den Berg, J.en
dc.contributor.authorZhang, S.en
dc.date.accessioned2015-11-24T17:36:14Z
dc.date.available2015-11-24T17:36:14Z
dc.identifier.issn0928-4931-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14224
dc.rightsDefault Licence-
dc.subjectsien
dc.subjectimplantationen
dc.subjectnanocrystalsen
dc.subjectmemoryen
dc.subjectsien
dc.titleMOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantationen
heal.abstractThe electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics. (C) 2001 Elsevier Science B.V. All rights reserved.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.secondary<Go to ISI>://000170709600034-
heal.journalNameMaterials Science & Engineering C-Biomimetic and Supramolecular Systemsen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate2001-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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