Structural, electrical, and low-frequency-noise properties of amorphous-carbon-silicon heterojunctions
| dc.contributor.author | Hastas, N. A. | en |
| dc.contributor.author | Dimitriadis, C. A. | en |
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Panayiotatos, Y. | en |
| dc.contributor.author | Tassis, D. H. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.date.accessioned | 2015-11-24T17:38:41Z | |
| dc.date.available | 2015-11-24T17:38:41Z | |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14532 | |
| dc.rights | Default Licence | - |
| dc.subject | diamond-like carbon | en |
| dc.subject | nitride thin-films | en |
| dc.subject | titanium nitride | en |
| dc.subject | n-type | en |
| dc.subject | interface | en |
| dc.subject | contacts | en |
| dc.title | Structural, electrical, and low-frequency-noise properties of amorphous-carbon-silicon heterojunctions | en |
| heal.abstract | The structural, electrical, and low-frequency-noise properties of heterojunctions of amor- phous-carbon (a-C) films grown on either n- or p-type single-crystal silicon are investigated. The a-C films were deposited by rf magnetron sputtering at room temperature with varying the substrate bias V-b, from +10 to -200 V. The study includes measurements of x-ray reflectivity (XRR), low-frequency noise at room temperature, and dark current-voltage (I-V) and capacitance-voltage (C-V) characteristics over a wide temperature range. Analysis of the XRR data indicates the presence of a thin SiC layer between a-C and Si, with thickness increasing up to about 1.8 nm for V-b = -200 V. The results show that the noise properties of the devices are independent of the SiC interlayer and the a-C film deposition conditions, while the noise of the a-C/n-Si heterojunctions is about four orders of magnitude lower than that of the a-C/p-Si heterojunctions. Analysis of the I-V and C-V data shows that the rectification properties of the a-C/n-Si heterojunctions are governed by conventional heterojunction theory, while multistep tunneling is the current conduction mechanism in a-C/p-Si heterojunctions due to a high density of interface states. (C) 2001 American Institute of Physics. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.primary | Doi 10.1063/1.1346654 | - |
| heal.identifier.secondary | <Go to ISI>://000167133000052 | - |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2001 | - |
| heal.publisher | American Institute of Physics | en |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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