Quantum Transport Measurements on Si Delta-Doped and Slab-Doped In0.53ga0.47as Grown by Molecular-Beam Epitaxy

dc.contributor.author	Mcelhinney, M.	en
dc.contributor.author	Skuras, E.	en
dc.contributor.author	Holmes, S. N.	en
dc.contributor.author	Johnson, E. A.	en
dc.contributor.author	Long, A. R.	en
dc.contributor.author	Stanley, C. R.	en
dc.date.accessioned	2015-11-24T17:37:47Z
dc.date.available	2015-11-24T17:37:47Z
dc.identifier.issn	0022-0248	-
dc.identifier.uri	https://olympias.lib.uoi.gr/jspui/handle/123456789/14404
dc.rights	Default Licence	-
dc.subject	gaas	en
dc.title	Quantum Transport Measurements on Si Delta-Doped and Slab-Doped In0.53ga0.47as Grown by Molecular-Beam Epitaxy	en
heal.abstract	A series of high quality delta-doped In-0.53,Ga0.47As samples have been grown lattice matched to InP with design doping densities in the range 2 x 10(12) to 5 x 10(12) cm(-2). Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.	en
heal.access	campus	-
heal.fullTextAvailability	TRUE	-
heal.identifier.primary	Doi 10.1016/0022-0248(95)80219-3	-
heal.identifier.secondary	<Go to ISI>://A1995RC73100051	-
heal.journalName	Journal of Crystal Growth	en
heal.journalType	peer reviewed	-
heal.language	en	-
heal.publicationDate	1995	-
heal.publisher	Elsevier	en
heal.recordProvider	Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών	el
heal.type	journalArticle	-
heal.type.el	Άρθρο Περιοδικού	el
heal.type.en	Journal article	en

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