Noise characterization of sputtered amorphous carbon films
| dc.contributor.author | Hastas, N. A. | en |
| dc.contributor.author | Dimitriadis, C. A. | en |
| dc.contributor.author | Panayiotatos, Y. | en |
| dc.contributor.author | Tassis, D. H. | en |
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.date.accessioned | 2015-11-24T17:36:34Z | |
| dc.date.available | 2015-11-24T17:36:34Z | |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14263 | |
| dc.rights | Default Licence | - |
| dc.subject | doped diamond | en |
| dc.subject | silicon | en |
| dc.title | Noise characterization of sputtered amorphous carbon films | en |
| heal.abstract | Low-frequency noise measurements have been carried out at room temperature in amorphous carbon (alpha-C) thin films with the current I as the parameter. The alpha-C films, rich in sp(2) bonds, were prepared by rf magnetron sputtering at room temperature. Hall measurements performed at room temperature show that the alpha-C films are p-type semiconductors with a hole concentration of about 2.8x10(18) cm(-3). In alpha-C film grown on oxidized silicon wafer, the current shows an ohmic behavior for low applied voltages, while the conduction mechanism is dominated by the Poole-Frenkel effect for high applied voltages. In the linear voltage region, the power spectral density of the current fluctuations exhibits 1/f(gamma) (with gamma < 1) behavior and is proportional to I-2. Using a noise model based on trapping-detrapping of holes of the valence band and the gap states of exponential energy distribution, the noise data can provide an assessment of the distribution of traps within the band gap of the alpha-C material. (C) 2000 American Institute of Physics. [S0021-8979(00)06722-0]. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.primary | Doi 10.1063/1.1317234 | - |
| heal.identifier.secondary | <Go to ISI>://000089813800088 | - |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2000 | - |
| heal.publisher | American Institute of Physics | en |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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