Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48As
| dc.contributor.author | Skuras, E. | en |
| dc.contributor.author | Stanley, C. R. | en |
| dc.contributor.author | Long, A. R. | en |
| dc.contributor.author | Johnson, E. A. | en |
| dc.contributor.author | MacKinnon, A. | en |
| dc.contributor.author | Yaguchi, H. | en |
| dc.contributor.author | van der Burgt, M. | en |
| dc.contributor.author | Singleton, J. | en |
| dc.date.accessioned | 2015-11-24T17:38:13Z | |
| dc.date.available | 2015-11-24T17:38:13Z | |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14460 | |
| dc.rights | Default Licence | - |
| dc.subject | molecular-beam epitaxy | en |
| dc.subject | delta-doped gaas | en |
| dc.subject | si | en |
| dc.subject | mobilities | en |
| dc.subject | saturation | en |
| dc.subject | transport | en |
| dc.title | Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48As | en |
| heal.abstract | The Shubnikov-de Haas effect in InAlAs measured using pulsed magnetic fields up to 50 T is reported. The InAlAs samples were grown by molecular beam epitaxy (MBE) and were either delta or slab doped with silicon at densities up to 7 x 10(12) cm(-2). Comparison of experimental subband densities with those calculated self-consistently shows that spreading of Si occurs by surface segregation at growth temperatures of similar to 520 degrees C, similar to its behavior in MBE-grown InGaAs. In contrast to InGaAs, the InAlAs exhibits persistent photoconductivity which appears to be caused by a bulk defect rather than DX(Si) states. (C) 1999 American Institute of Physics. [S0021-8979(99)00423-5]. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.identifier.primary | Doi 10.1063/1.371627 | - |
| heal.identifier.secondary | <Go to ISI>://000083729000104 | - |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 1999 | - |
| heal.publisher | American Institute of Physics | en |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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