Thermal and mechanical analysis of photoresist and silylated photoresist films: Application to AZ 5214(TM)

dc.contributor.authorGogolides, E.en
dc.contributor.authorTegou, E.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorPapadokostaki, K.en
dc.contributor.authorHatzakis, M.en
dc.date.accessioned2015-11-24T17:31:32Z
dc.date.available2015-11-24T17:31:32Z
dc.identifier.issn0167-9317-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13597
dc.rightsDefault Licence-
dc.titleThermal and mechanical analysis of photoresist and silylated photoresist films: Application to AZ 5214(TM)en
heal.abstractCombined thermal and mechanical analysis of spun-on photoresist, and silylated photoresist films after each lithographic step was done using Differential Scanning Calorimetry (DSC) and Thermomechanical Analysis (TMA). For reacting photoresist systems the DSC method is excellent for determination of both the baking-temperature ranges in which the reactions take place, and the heat of reaction. For calculation of the glass transition temperature (T-g), and mechanical deformation of resists however, TMA proves most appropriate. This methodology was applied for a commercial photoresist AZ 5214(TM) to determine the thermally or melamine induced crosslinking temperature regions, the T-g of crosslinked samples, and to show that wet HMCTS (Hexamethyl-Cyclo-Tri-Silazane) silylated films have higher T-g values than the original photoresist.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.secondary<Go to ISI>://A1996TV40000060-
heal.journalNameMicroelectronic Engineeringen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1996-
heal.publisherElsevieren
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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