Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
dc.contributor.author | Normand, P. | en |
dc.contributor.author | Kapetanakis, E. | en |
dc.contributor.author | Dimitrakis, P. | en |
dc.contributor.author | Skarlatos, D. | en |
dc.contributor.author | Beltsios, K. | en |
dc.contributor.author | Tsoukalas, D. | en |
dc.contributor.author | Bonafos, C. | en |
dc.contributor.author | Ben Assayag, G. | en |
dc.contributor.author | Cherkashin, N. | en |
dc.contributor.author | Claverie, A. | en |
dc.contributor.author | Van Den Berg, J. A. | en |
dc.contributor.author | Soncini, V. | en |
dc.contributor.author | Agarwal, A. | en |
dc.contributor.author | Ameen, M. | en |
dc.contributor.author | Perego, M. | en |
dc.contributor.author | Fanciulli, M. | en |
dc.date.accessioned | 2015-11-24T17:36:22Z | |
dc.date.available | 2015-11-24T17:36:22Z | |
dc.identifier.issn | 0168-583X | - |
dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14240 | |
dc.rights | Default Licence | - |
dc.subject | nanocrystals | en |
dc.subject | ion beam synthesis | en |
dc.subject | non-volatile memory | en |
dc.subject | silicon implantation | en |
dc.subject | si-rich sio2-films | en |
dc.subject | thin sio2 | en |
dc.subject | semiconductor structure | en |
dc.subject | electrical-properties | en |
dc.subject | silicon nanocrystals | en |
dc.subject | 2-d arrays | en |
dc.subject | implantation | en |
dc.subject | charge | en |
dc.subject | oxide | en |
dc.subject | devices | en |
dc.title | Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications | en |
heal.abstract | An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications. (C) 2003 Elsevier B.V. All rights reserved. | en |
heal.access | campus | - |
heal.fullTextAvailability | TRUE | - |
heal.identifier.primary | DOI 10.1016/j.nimb.2003.11.039 | - |
heal.identifier.secondary | <Go to ISI>://000189222100038 | - |
heal.identifier.secondary | http://ac.els-cdn.com/S0168583X03021517/1-s2.0-S0168583X03021517-main.pdf?_tid=a7c6b05c9c83fada9a0d2931c7220086&acdnat=1339662575_42b5add09aba45a244ce25db2c26a697 | - |
heal.journalName | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms | en |
heal.journalType | peer reviewed | - |
heal.language | en | - |
heal.publicationDate | 2004 | - |
heal.publisher | Elsevier | en |
heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
heal.type | journalArticle | - |
heal.type.el | Άρθρο Περιοδικού | el |
heal.type.en | Journal article | en |
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