Growth and Metallization in Potassium Adsorption on the Si(100) Surface

dc.contributor.authorFoulias, S.en
dc.contributor.authorCurson, N. J.en
dc.contributor.authorCowen, M. C.en
dc.contributor.authorAllison, W.en
dc.date.accessioned2015-11-24T18:27:36Z
dc.date.available2015-11-24T18:27:36Z
dc.identifier.issn0039-6028-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/16058
dc.rightsDefault Licence-
dc.subjectalkali metals, atom-solid scattering and diffractionen
dc.subjectelastic, growth, metallic films, silicon,en
dc.subjectsurface electronic phenomenaen
dc.subjectcoverage dependenceen
dc.subjectk adsorptionen
dc.subjectmetallizationen
dc.subjectsi(001)-(2x1)en
dc.subjectphotoemissionen
dc.subjectk/si(100)2x1en
dc.subjectstatesen
dc.titleGrowth and Metallization in Potassium Adsorption on the Si(100) Surfaceen
heal.abstractThe growth of K on Si(100), at 150 K, has been studied in situ by helium atom scattering. The transition from a corrugated, semi-conducting surface charge density to a smooth, metallic surface is clearly visible in the data. Below one monolayer we identify a single ordered overlayer at a coverage corresponding to 0.5 ML with respect to the Si atom density. A close packed metal film develops near 1 ML and reaches maximum order at 1.25 ML. The density of the metal film is consistent with a c(4 X 2) structure with a lattice mismatch of 3.5% in the [011] direction (overlayer expansion) and 2.3% in the [0 ($) over bar 11] direction (overlayer compression) or vice versa. At higher coverages, the film appears to develop by island growth.en
heal.accesscampus-
heal.fullTextAvailabilityTRUE-
heal.identifier.secondary<Go to ISI>://A1995RJ78600092-
heal.journalNameSurface Scienceen
heal.journalTypepeer reviewed-
heal.languageen-
heal.publicationDate1995-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιώνel
heal.typejournalArticle-
heal.type.elΆρθρο Περιοδικούel
heal.type.enJournal articleen

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