Device simulation of a n-DMOS cell with trench isolation
| dc.contributor.author | Kamoulakos, G. | en |
| dc.contributor.author | Haniotakis, T. | en |
| dc.contributor.author | Tsiatouhas, Y. | en |
| dc.contributor.author | Schoellkopf, J. P. | en |
| dc.contributor.author | Arapoyanni, A. | en |
| dc.date.accessioned | 2015-11-24T17:00:05Z | |
| dc.date.available | 2015-11-24T17:00:05Z | |
| dc.identifier.issn | 0026-2692 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/10704 | |
| dc.rights | Default Licence | - |
| dc.subject | trench isolation | en |
| dc.subject | drift mosfet | en |
| dc.subject | high voltage device | en |
| dc.subject | device simulation | en |
| dc.title | Device simulation of a n-DMOS cell with trench isolation | en |
| heal.abstract | The DMOS cell, a high-voltage transistor, implemented in low voltage standard 0.18 mum double-well CMOS technology with trench isolation is studied. The operation of the cell is investigated with the use of a device simulator while the effect of the trench to the operation of the cell is revealed. (C) 2000 Elsevier Science Ltd. All rights reserved. | en |
| heal.access | campus | - |
| heal.fullTextAvailability | TRUE | - |
| heal.journalName | Microelectronics Journal | en |
| heal.journalType | peer reviewed | - |
| heal.language | en | - |
| heal.publicationDate | 2001 | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Ηλεκτρονικών Υπολογιστών και Πληροφορικής | el |
| heal.type | journalArticle | - |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.type.en | Journal article | en |
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